Product Details
- Product: IGBT
- IC: 15N120
- Number of pins: 3
- Mounting type: through hole
- Package: TO-3PN
- Package contains: 1 x 15N120 Fast IGBT
15N120 1200V Fast IGBT Power Transistor
₹95.00Price
Specification
- Collector-emitter voltage: 1200V
- Gate-emitter voltage: ±20V
- Minimum gate-emitter threshold voltage: 4.5V
- Maximum gate-emitter threshold voltage: 8.5V
- Typical gate-emitter threshold voltage: 6.5V
- Collector to emitter saturation voltage: 1.9V to 2.3V (vary with temperature, current, and voltage conditions)
- Collector current
- At 25℃: 30V
- At 50℃: 15V
- Maximum pulsed collector current: 45A
- Diode continuous forward current: 15A
- Diode maximum forward current: 45A
- Collector cut-off current: 3mA
- Gate-emitter leakage current: ±250nA
- Rise time: 20ns
- Fall time: 100ns
- Storage and operating temperature: -55℃ to 150V
