2N3055 is a silicon NPN transistor, designed for general purpose switching and amplification applications. It is manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. This is a current control device, in which a small current at the base controls a large amount of current at emitter and collector side. It also can be used in audio power amplifiers as it has a good amplifying factor and gain is almost linear.
Features
- Current controlled device
- Medium power transistor
- Linear gain
- The excellent safe operating area
- Complementary NPN-NPN transistor
- The low collector-emitter saturation voltage
Specification
- Collector-emitter voltage: 60V DC
- Collector-base voltage: 100V Dc
- Emitter-base voltage: 7V DC
- Maximum continuous collector current: 15A DC
- Maximum base current: 7A DC
- Collector cutoff current: 0.7mA to 5mA
- Emitter cutoff current: 5mA
- DC current gain (hFE): 20 to 70
- Total power dissipation: 115W
- Operating temperature: -65℃ to +200℃
Application
- Power switching and amplifier circuit
- PWM or motor control applications
- Regulator circuits
- Signal amplifiers
