2N3055 is a silicon NPN transistor, designed for general purpose switching and amplification applications. It is manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. This is a current control device, in which a small current at the base controls a large amount of current at emitter and collector side. It also can be used in audio power amplifiers as it has a good amplifying factor and gain is almost linear. 

Features

• Current controlled device
• Medium power transistor
• Linear gain
• The excellent safe operating area
• Complementary NPN-NPN transistor
• The low collector-emitter saturation voltage

Specification

• Collector-emitter voltage: 60V DC
• Collector-base voltage: 100V Dc
• Emitter-base voltage: 7V DC
• Maximum continuous collector current: 15A DC
• Maximum base current: 7A DC
• Collector cutoff current: 0.7mA to 5mA
• Emitter cutoff current: 5mA
• DC current gain (hFE): 20 to 70
• Total power dissipation: 115W
• Operating temperature: -65℃ to +200℃

Application

• Power switching and amplifier circuit
• PWM or motor control applications
• Regulator circuits
• Signal amplifiers