Features

• High total power dissipation 
• High Hfe
• Good linearity 
• Low level and low noise transistor

Specification

• Collector-base voltage: -40V
• Collector-emitter voltage: -25V
• Emitter-base voltage: -5V
• Collector current: -500mA
• Collector power dissipation: 625mW
• DC current gain: 64Hfe to 202Hfe
• Transition frequency: 150MHz
• Operating temperature: -55℃ to +150℃

Application

• General purpose switching and amplification application
• Driving loads under 500mA
• General purpose application