H21A1 is an optical sensor consists of gallium arsenide infrared emitting diode, which is coupled with silicon phototransistor in a plastic housing. the sensor design has features like optimizing the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The housing has a gap, which provides a means of interrupting signal with an opaque material and switches the output from ON to OFF state.

Specification

• Sensing distance: 3mm
• Sensing method: transmissive
• Output configurations: phototransistor
• Maximum emitter collector breakdown voltage: 30V
• Maximum DC forward current: 50mA
• Maximum collector current: 20mA
• Response time: 8-15µ
• Mounting type: through hole
• Package type: slotted