Features

• Dynamic dv/dt capability
• Fully avalanche rated
• Ultra low on-resistance 
• Advanced process technology
• Fast switching 
• 175℃ operating temperature

Specification

• Drain-source voltage: 75V
• Drain-gate voltage: 75V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 82A
  • At 100℃: 58A
• Pulsed drain current: 280A
• Maximum avalanche current: 43A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 64nS
• Fall time: 48nS
• Turn-on delay time: 13nS
• Turn-off delay time: 49nS
• Diode forward voltage: 1.2V
• Reverse recovery time: 100ns to 150ns
• Reverse recovery charge: 410nC to 610nC
• Maximum power dissipation: 230W
• Operating temperature: -55℃ to 175℃