Features

• Dynamic dv/dt capability
• Advanced process technology
• Fully avalanche rated
• Ultra low on-resistance
• Fast switching
• 175℃ operating temperature

Specification

• Drain-source voltage: -55V
• Drain-gate voltage: -55V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -74A
  • At 100℃: -52A
• Pulsed drain current: -260A
• Maximum avalanche current: -38A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: – 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 99nS
• Fall time: 96nS
• Turn-on delay time: 18nS
• Turn-off delay time: 61nS
• Diode forward voltage: -1.36
• Reverse recovery time: 89ns to 130ns
• Reverse recovery charge: 230nC to 350nC
• Maximum power dissipation: 200W
• Operating temperature: -55℃ to 175℃