Product Details
- Product: IRF510
- Transistor type: MOSFET
- Control channel: N-Channel
- No of pins: 3
- Package: TO-220AB
- Mounting type: through hole
- Package contains: 1 x IRF510 100V 5.6A N-Channel Power MOSFET
IRF510 100V 5.6A N-Channel Power MOSFET
₹69.00Price
Features
- Dynamic dv/dt capability
- Fully avalanche rated
- Ultra low on-resistance
- Ease of paralleling
- Simple drive requirement
- 175℃ operating temperature
Specification
- Drain-source voltage: -55V
- Drain-gate voltage: -55V
- Gate-source voltage: ±20V
- Continuous drain current:
- At 25℃: 5.6A
- At 100℃: 4A
- Pulsed drain current: 20A
- Maximum avalanche current: 5.6A
- Gate threshold voltage: 2V to 4V
- Drain-to-source leakage current: 25µA
- Gate-to-source forward leakage: 100nA
- Gate-to-source reverse leakage: -100nA
- Rise time: 16nS
- Fall time: 9.4nS
- Turn-on delay time: 6.9nS
- Turn-off delay time: 15nS
- Diode forward voltage: 2.5V
- Reverse recovery time: 100ns to 200ns
- Reverse recovery charge: 0.44µC to 0.88µC
- Maximum power dissipation: 43W
- Operating temperature: -55℃ to 175℃
