Product Details
- Product: IRF630
- Transistor type: MOSFET
- Control channel: N-Channel
- No of pins: 3
- Package: TO-220AB
- Mounting type: through hole
- Package contains: 1 x IRF630 200V 9A N-Channel Power MOSFET
IRF630 200V 9A N-Channel Power MOSFET
₹39.00Price
Features
- Dynamic dv/dt capability
- Fully avalanche rated
- Advanced process technology
- Fast switching
- Ease of paralleling
- Simple drive requirement
- 175℃ operating temperature
Specification
- Drain-source voltage: 200V
- Drain-gate voltage: 200V
- Gate-source voltage: ±20V
- Continuous drain current:
- At 25℃: 9.3A
- At 100℃: 6.5A
- Pulsed drain current: 37A
- Maximum avalanche current: 9.3A
- Gate threshold voltage: 2V to 4V
- Drain-to-source leakage current: 25µA
- Gate-to-source forward leakage: 100nA
- Gate-to-source reverse leakage: -100nA
- Rise time: 14nS
- Fall time: 15nS
- Turn-on delay time: 7.9nS
- Turn-off delay time: 27nS
- Diode forward voltage: 1.3V
- Reverse recovery time: 117ns to 176ns
- Reverse recovery charge: 542nC to 813nC
- Maximum power dissipation: 82W
- Operating temperature: -55℃ to 175℃
