Product Details
- Product: IRF9Z34
- Transistor type: MOSFET
- Control channel: P-Channel
- No of pins: 3
- Package: TO-220
- Mounting type: through hole
- Package contains: 1 x IRF9Z34 60V 18A P-Channel Power MOSFET
IRF9Z34 60V 18A P-Channel Power MOSFET
Features
- Dynamic dv/dt capability
- Advanced process technology
- Fully avalanche rated
- Fast switching
- 175℃ operating temperature
Specification
- Drain-source voltage: -55V
- Drain-gate voltage: -55V
- Gate-source voltage: ±20V
- Continuous drain current:
- At 25℃: -19A
- At 100℃: -14A
- Pulsed drain current: -68A
- Maximum avalanche current: -10A
- Gate threshold voltage: -2V to -4V
- Drain-to-source leakage current: -25µA
- Gate-to-source forward leakage: 100nA
- Gate-to-source reverse leakage: -100nA
- Rise time: 55nS
- Fall time: 41nS
- Turn-on delay time: 13nS
- Turn-off delay time: 30nS
- Diode forward voltage: -1.6V
- Reverse recovery time: 54ns to 82ns
- Reverse recovery charge: 110nC to 160nC
- Maximum power dissipation: 68W
- Operating temperature: -55℃ to 175℃