Product Details
- Product: IRFB4110
- Transistor type: MOSFET
- Control channel: N-Channel
- No of pins: 3
- Package: TO-220AB
- Mounting type: through hole
- Package contains: 1 x IRFB4110 100V 180A N-Channel Power MOSFET
IRFB4110 100V 180A N-Channel Power MOSFET
Features
- Dynamic dv/dt capability
- Advanced process technology
- Fully avalanche rated
- Fast switching
Specification
- Drain-source voltage: 100V
- Drain-gate voltage: 100V
- Gate-source voltage: ±20V
- Continuous drain current:
- At 25℃: 180A
- At 100℃: 130A
- Pulsed drain current: 670A
- Gate threshold voltage: 2V to 4V
- Drain-to-source leakage current: 20µA
- Gate-to-source forward leakage: 100nA
- Gate-to-source reverse leakage: -100nA
- Rise time: 67nS
- Fall time: 88nS
- Turn-on delay time: 25ns
- Turn-off delay time: 78ns
- Diode forward voltage: 1.3V
- Reverse recovery time: 50ns to 90ns
- Reverse recovery charge: 94nC to 140nC
- Reverse recovery current: 3.5A
- Maximum power dissipation: 370W
- Operating temperature: -55℃ to 175℃
Application
- Motion control application
- High efficiency synchronous rectification in SMPS
- Uninterrupted power supply
- Hard switched and high frequency circuits