Product Details
- Product: IRFBG30
- Transistor type: MOSFET
- Control channel: N-channel
- No of pins: 3
- Package: TO-220
- Mounting type: through hole
- Package contains: 1 x IRFBG30 1000V 3.1A N-Channel Power MOSFET
IRFBG30 1000V 3.1A N-Channel Power MOSFET
Features
- Dynamic dv/dt capability
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
Specification
- Drain-source voltage: 1000V
- Drain-gate voltage: 1000V
- Gate-source voltage: ±20V
- Continuous drain current:
- At 25℃: 3.1A
- At 100℃: 2A
- Pulsed drain current: 12A
- Avalanche current: 3.1A
- Maximum power dissipation: 125W
- Operating temperature: -55℃ to 175℃