Product DetailsProduct: IRFBG30Transistor type: MOSFETControl channel: N-channelNo of pins: 3Package: TO-220Mounting type: through holePackage contains: 1 x IRFBG30 1000V 3.1A N-Channel Power MOSFETIRFBG30 1000V 3.1A N-Channel Power MOSFET₹109.00PriceQuantity*Add to CartDescriptionFeatures Dynamic dv/dt capability Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirement Specification Drain-source voltage: 1000V Drain-gate voltage: 1000V Gate-source voltage: ±20V Continuous drain current: At 25℃: 3.1A At 100℃: 2A Pulsed drain current: 12A Avalanche current: 3.1A Maximum power dissipation: 125W Operating temperature: -55℃ to 175℃