Features

• Dynamic dv/dt capability
• Fully avalanche rated
• Ultra low on-resistance 
• Advanced process technology
• Fast switching 
• 175℃ operating temperature

Specification

• Drain-source voltage: 55V
• Drain-gate voltage: 55V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 169A
  • At 100℃: 118A
• Pulsed drain current: 680A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 20µA
• Gate-to-source forward leakage: 200nA
• Gate-to-source reverse leakage: -200nA
• Rise time: 190nS
• Fall time: 110nS
• Turn-on delay time: 13nS
• Turn-off delay time: 130nS
• Diode forward voltage: 1.3V
• Reverse recovery time: 88ns to 130ns
• Reverse recovery charge: 250nC to 380nC
• Maximum power dissipation: 330W
• Operating temperature: -55℃ to 175℃