Product Details
- Product: IRF9Z24
- Transistor type: MOSFET
- Control channel: P-Channel
- No of pins: 3
- Package: TO-220
- Mounting type: through hole
- Package contains: 1 x IRF9Z24 60V 11A P-Channel Power MOSFET
IRF9Z24 60V 11A P-Channel Power MOSFET
Features
- Dynamic dv/dt capability
- Advanced process technology
- Fully avalanche rated
- Fast switching
Specification
- Drain-source voltage: 55V
- Drain-gate voltage: 55V
- Gate-source voltage: ±20V
- Continuous drain current:
- At 25℃: 17A
- At 100℃: 12A
- Pulsed drain current: 68A
- Maximum avalanche current: 10A
- Gate threshold voltage: 2V to 4V
- Drain-to-source leakage current: 25µA
- Gate-to-source forward leakage: 100nA
- Gate-to-source reverse leakage: -100nA
- Rise time: 34nS
- Fall time: 27nS
- Turn-on delay time: 4.9nS
- Turn-off delay time: 19nS
- Maximum power dissipation: 45W
- Operating temperature: -55℃ to 175℃